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Ao. Prof. Dr. Gerhard Hobler

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Biography

Publications

Publications before 1996

Publications in Journals

  1. S. Senkader, J. Esfandyari, and G. Hobler, "A model for oxygen precipitation in silicon including bulk stacking fault growth", J. Appl. Phys., 78(11), 6469-6476, 1995.

  2. A. Simionescu, G. Hobler, S. Bogen, L. Frey, and H. Ryssel, "Model for the electronic stopping of channeled ions in silicon around the stopping power maximum", Nucl. Instr. Meth., B 106, 47-50, 1995.

  3. K. Gärtner, D. Stock, B. Weber, G. Betz, M. Hautala, G. Hobler, M. Hou, S. Sarite, W. Eckstein, J. J. Jimenez-Rodriguez, A. M. C. Perez-Martin, E. P. Andribet, V. Konoplev, A. Gras-Marti, M. Posselt, M. H. Shapiro, T. A. Tombrello, H. M. Urbassek, H. Hensel, Y. Yamamura, and W. Takeuchi, "Round robin computer simulation of ion transmission through thin crystalline layers", Nucl. Instr. Meth., B 102, 183-197, 1995.

  4. G. Hobler and A. Simionescu, "Acceleration of binary collision simulations in crystalline targets using critical angles for ion channeling", Nucl. Instr. Meth., B 102, 24-28, 1995.

  5. A. Simionescu, S. Herzog, G. Hobler, R. Schork, J. Lorenz, C. Tian, and G. Stingeder, "Modeling of electronic stopping and damage accumulation during arsenic implantation in silicon", Nucl. Instr. Meth., B 100, 483-489, 1995.

  6. K. Ghaderi and G. Hobler, "Simulation of phosphorus diffusion in silicon using a pair diffusion model with a reduced number of parameters", J. Electrochem. Soc., 142, 1654-1658, 1995.

  7. G. Hobler, A. Simionescu, L. Palmetshofer, C. Tian, and G. Stingeder, "Boron channeling implantations in silicon: Modeling of electronic stopping and damage accumulation", J. Appl. Phys., 77(8), 3697-3703, 1995.

  8. K. Ghaderi, G. Hobler, M. Budil, L. Mader, and H.J. Schulze, "Determination of silicon point defect parameters and reaction barrier energies from gold diffusion experiments", J. Appl. Phys., 77(3), 1320-1322, 1995.

  9. G. Hobler, "Monte Carlo simulation of two-dimensional implanted dopant distributions at mask edges", Nucl. Instr. Meth., B 96, 155-162, 1995.

  10. R. Slehobr and G. Hobler, "Efficient simulation of 3-D stress distributions at trench structures caused by thermal mismatch of trench filling and silicon substrate", COMPEL, 13(4), 861-870, 1994.

  11. J. Nicolics and G. Hobler, "Numerical analysis of transient temperature distributions during laser soldering", COMPEL, 13(4), 845-860, 1994.

  12. H. Cerva and G. Hobler, "Comparison of transmission electron microscope cross sections of amorphous regions in ion implanted silicon with point defect density calculations", J. Electrochem. Soc., 139(12), 3631-3638, 1992.

  13. G. Hobler and H. Pötzl, "The effect of a screening oxide on ion implantation studied by Monte Carlo simulations", COMPEL, 11(4), 403-411, 1992.

  14. C. Tian, S. Gara, G. Hobler, and G. Stingeder, "Boron implantation in Si: Channeling effects studied by SIMS and simulation", Mikrochimica Acta, 107, 161-169, 1992.

  15. C. Tian, S. Gara, G. Hobler, and G. Stingeder, "Dependence of boron axial channeling in silicon on crystal orientation", Surf. Interf. Anal., 19, 369-373, 1992.

  16. G. Hobler, H. Pötzl, L. Palmetshofer, R. Schork, J. Lorenz, C. Tian, S. Gara, and G. Stingeder, "An empirical model for the electronic stopping of boron in silicon", COMPEL, 10(4), 323-330, 1991.

  17. M. Schrems, G. Hobler, M. Budil, H. Pötzl, and J. Hage, "Calculation of internal gettering sites after double-step and CMOS-type thermal anneals", Microelectronic Eng., 15, 57-60, 1991.

  18. G. Hobler and S. Selberherr, "Monte Carlo simulation of ion implantation into two- and three-dimensional structures", IEEE Trans. Comp.-Aided Des., 8(5), 450-459, 1989.

  19. G. Hobler and S. Selberherr, "Two-dimensional modeling of ion implantation induced point defects", IEEE Trans. Comp.-Aided Des., 7(2), 174-180, 1988.

  20. G. Hobler, E. Langer, and S. Selberherr, "Two-dimensional modeling of ion implantation with spatial moments", Sol.-State Electron., 30(4), 445-455, 1987.

Publications in Conference Proceedings

  1. S. Herzog, A. Simionescu, G. Hobler, L. Palmetshofer, K. Piplits, and M. Grasserbauer, "Monte Carlo simulation of channeled phosphorus implantations in silicon", In ESSDERC 95 (H. C. de Graaff and H. van Kranenburg, editors), pp. 187-190. Editions Frontieres, Gif sur Yvette Cedex, 1995.

  2. A. Simionescu, G. Hobler, and F. Lau, "Monte Carlo simulation of multiple-species ion implantation and its application to the modeling of 0.1 µ PMOS devices", In Simulation of Semiconductor Devices and Processes, Vol. 6 (H. Ryssel and P. Pichler, editors), pp. 484-487. Springer, Wien, 1995.

  3. A. Simionescu and G. Hobler, "Comparison of damage accumulation models for boron implantation in silicon", In Mat. Res. Soc. Symp. Proc., vol. 389, pp. 221-226. MRS, Pittsburgh, 1995.

  4. G. Hobler, A. Simionescu, S. Herzog, L. Palmetshofer, and K. Piplits, "Modellierung der Ionenimplantation in Silizium", In Tagungsband Grundlagen und Technologie elektronischer Bauelemente, pp. 59-62, 1995. Großarl.

  5. G. Hobler, A. Simionescu, L. Palmetshofer, F. Jahnel, R. von Criegern, C. Tian, and G. Stingeder, "Verification of models for the simulation of boron implantation into crystalline silicon", In Proc. 3rd Intl. Workshop on the Measurement and Characterization of Ultra-Shallow Doping Profiles in Semiconductors (J. Ehrstein, R. Mathur, and G. McGuire, editors), pp. 14.1-14.9, 1995.

  6. J. Esfandyari, S. Senkader, G. Hobler, and B. Murphy, "A model for oxygen precipitation and bulk stacking fault formation in silicon", In 22nd Intl. Conf. Physics of Semiconductors (D.J. Lockwood, editor), pp. 2403-2406. World Scientific, 1995.

  7. A. Simionescu, G. Hobler, and R. von Criegern, "Monte Carlo simulation of ion implantation into two-dimensional structures and its application to the prediction of lateral SIMS results", In ESSDERC 94 (C. Hill and P. Ashburn, editors), pp. 97-100. Editions Frontieres, Gif-sur-Yvette Cedex, 1994.

  8. K. Ghaderi, G. Hobler, M. Budil, L. Mader, and H.J. Schulze, "Determination of reaction barrier energies in the case of gold diffusion", In ESSDERC 94 (C. Hill and P. Ashburn, editors), pp. 251-254. Editions Frontieres, Gif-sur-Yvette Cedex, 1994.

  9. S. Senkader, J. Esfandyari, G. Hobler, and B. Murphy, "Simulation of internal gettering sites in Czochralski silicon", In ESSDERC 94 (C. Hill and P. Ashburn, editors), pp. 247-250. Editions Frontieres, Gif-sur-Yvette Cedex, 1994.

  10. R. Slehobr and G. Hobler, "Efficient simulation of 3-d stress distributions caused by silicon trenches", In NASECODE X (J.J.H. Miller, editor), pp. 70-71. Boole Press, Dublin, 1994.

  11. J. Nicolics and G. Hobler, "Thermal simulation of high speed laser soldering processes", In NASECODE X (J.J.H. Miller, editor), pp. 68-69. Boole Press, Dublin, 1994.

  12. K. Ghaderi, G. Hobler, M. Budil, H. Pötzl, P. Pichler, H. Ryssel, W. Hansch, I. Eisele, G. Stingeder, and C. Tian, "Simulation of buried layer experiments containing all four dopant species", In Semiconductor Silicon/1994 (H.R. Huff, W. Bergholz, and K. Sumino, editors), pp. 613-624. The Electrochem. Soc., 1994.

  13. J. Esfandyari, S. Senkader, G. Hobler, H. Pötzl, and B. Murphy, "Computer simulation of the influence of point and extended defects on the precipitation of oxygen during rapid thermal processing", In Semiconductor Silicon/1994 (H.R. Huff, W. Bergholz, and K. Sumino, editors), pp. 896-907. The Electrochem. Soc., 1994.

  14. A. Simionescu and G. Hobler, "Monte Carlo simulation of ion implantation in silicon", In ICEE-94, Electronics, pp. 63-72. Tarbiat-Modarres University, Teheran, Iran, 1994.

  15. S. Senkader, J. Esfandyari, G. Hobler, H. Pötzl, and B. Murphy, "Simulation of oxygen precipitation in silicon", In ICEE-94, Electronics, pp. 55-62. Tarbiat-Modarres University, Teheran, Iran, 1994.

  16. K. Ghaderi, G. Hobler, H. Pötzl, and M.N. Tehrani, "Simulation of dopant diffusion in silicon with pair diffusion models", In ICEE-94, Electronics, pp. 21-29. Tarbiat-Modarres University, Teheran, Iran, 1994.

  17. R. Slehobr, G. Hobler, and H. Pötzl, "Efficient calculation of 3-d stress distributions in silicon around embedded structures", In ESSDERC 93 (J. Borel, P. Gentil, J.P. Noblanc, A. Nouailhat, and M. Verdone, editors), pp. 93-96. Editions Frontieres, Gif-sur-Yvette, 1993.

  18. J. Esfandyari, G. Hobler, S. Senkader, H. Pötzl, and B. Murphy, "Simulation of denuded zone formation in Cz silicon", In Simulation of Semiconductor Devices and Processes (S. Selberherr, H. Stippel, and E. Strasser, editors), vol. 5, pp. 145-148. Springer, Wien, 1993.

  19. A. Simionescu and G. Hobler, "Two-dimensional Monte Carlo simulation of ion implantation in crystalline silicon considering damage formation", In Simulation of Semiconductor Devices and Processes (S. Selberherr, H. Stippel, and E. Strasser, editors), vol. 5, pp. 361-364. Springer, Wien, 1993.

  20. G. Hobler, "Critical angles for ion channeling in silicon", In Process Physics and Modeling in Semiconductor Technology (G. R. Srinivasan, K. Taniguchi, and C. S. Murthy, editors), pp. 529-544. The Electrochem. Soc., Pennington, 1993.

  21. K. Ghaderi, G. Hobler, M. Budil, H. Pötzl, P. Pichler, H. Ryssel, W. Hansch, and I. Eisele, "Determination of parameters of the pair diffusion model", In NASECODE IX (J.J.H. Miller, editor), pp. 53-54. Front Range Press, Boulder, Colorado, 1993.

  22. G. Hobler, "The role of lattice vibrations and interatomic potentials in the simulation of ion implantation", In NASECODE IX (J. J. H. Miller, editor), pp. 55-56. Front Range Press, Boulder, Colorado, 1993.

  23. H. Cerva and G. Hobler, "Depth of amorphized ion implanted silicon zones predicted from point defect density calculations and TEM cross sections", In Inst. Phys. Conf. Ser., vol. 134, pp. 133-136, 1993.

  24. G. Hobler and H. Pötzl, "Electronic stopping of channeled ions in silicon", In Mat. Res. Soc. Symp. Proc., vol. 279, pp. 165-170. MRS, Pittsburgh, 1993.

  25. H. Stippel, G. Hobler, and S. Selberherr, "Three dimensional simulation of ion implantation", In Solid State and Integrated Circuit Technology, pp. 703-705. Publishing House of Electronics Industry, China, 1992.

  26. H. Stippel, S. Halama, G. Hobler, K. Wimmer, and S. Selberherr, "Adaptive grid for Monte Carlo ion implantation", In NUPAD IV Techn. Dig., pp. 231-236. IEEE, Piscataway, 1992.

  27. G. Hobler and H. Pötzl, "The effect of a screening oxide on ion implantation studied by Monte Carlo simulations", In NASECODE VIII (J. J. H. Miller, editor), pp. 16-17. Boole Press, Dublin, 1992.

  28. G. Hobler and H. Pötzl, "Simulation of two-dimensional implantation profiles with a large concentration range in crystalline silicon using an advanced Monte Carlo method", In 1991 IEDM Techn. Dig., pp. 693-696. IEEE, Piscataway, 1991.

  29. S. Halama, K. Wimmer, G. Hobler, and S. Selberherr, "Eine neue Methode zur simulation der Diffusion in allgemeinen Strukturen", In Grundlagen und Technologie elektronischer Bauelemente, pp. 20-26, 1991. Gesellschaft für Mikroelektronik, Vienna.

  30. K. Wimmer, R. Bauer, S. Halama, G. Hobler, and S. Selberherr, "Simulation nichtplanarer Herstellungsprozesse mit PROMIS", In Grundlagen und Technologie elektronischer Bauelemente, pp. 10-19, 1991. Gesellschaft für Mikroelektronik, Vienna.

  31. M. Schrems, G. Hobler, H. Pötzl, and J. Hage, "A numerical study of oxygen precipitation in Cz-silicon: LO-HI and CMOS-type thermal cycles", In Proc. 1991 IEMT Symp., pp. 110-114. IEEE, Piscataway, 1991.

  32. M. Schrems, M. Budil, G. Hobler, H. Pötzl, and J. Hage, "Oxygen precipitation in Cz-silicon during multi-step annealing cycles", In Simulation of Semiconductor Devices and Processes (W. Fichtner and D. Ämmer, editors), vol. 4, pp. 113-123. Hartung-Gorre, Konstanz, 1991.

  33. K. Wimmer, R. Bauer, S. Halama, G. Hobler, and S. Selberherr, "Transformation methods for nonplanar process simulation", In Simulation of Semiconductor Devices and Processes (W. Fichtner and D. Ämmer, editors), vol. 4, pp. 131-138. Hartung-Gorre, Konstanz, 1991.

  34. G. Hobler, H. Pötzl, L. Gong, and H. Ryssel, "Two-dimensional Monte Carlo simulation of boron implantation in crystalline silicon", In Simulation of Semiconductor Devices and Processes (W. Fichtner and D. Ämmer, editors), vol. 4, pp. 389-398. Hartung Gorre, Konstanz, 1991.

  35. C. Tian, S. Gara, G. Hobler, and G. Stingeder, "Mapping of B-channeling by SIMS", In Proc. SIMS VIII, pp. 845-848. Wiley, New York, 1991.

  36. G. Hobler, H. Pötzl, L. Palmetshofer, R. Schork, J. Lorenz, C. Tian, S. Gara, and G. Stingeder, "An empirical model for the electronic stopping of boron in silicon", In NASECODE VII (J. J. H. Miller, editor), pp. 85-86. Front Range Press, Boulder, Colorado, 1991.

  37. G. Hobler, H. Pötzl, R. Schork, J. Lorenz, S. Gara, and G. Stingeder, "Channeling of boron in silicon: Experiments and simulation", In ESSDERC 90 (W. Eccleston and P. J. Rosser, editors), pp. 217-220. Adam Hilger, Bristol, 1990.

  38. S. Halama, K. Wimmer, G. Hobler, and S. Selberherr, "Finite-Differenzen Dreiecksnetzgenerierung für die Prozeßsimulation mit PROMIS", In Tagungsband NuTech90, p. 3, 1990.

  39. K. Wimmer, R. Bauer, S. Halama, G. Hobler, and S. Selberherr, "Prozeß-Simulation in nichtplanaren Strukturen mit PROMIS", In Tagungsband NuTech90, p. 4, 1990.

  40. G. Hobler, S. Halama, W. Wimmer, S. Selberherr, and H. Pötzl, "RTA-simulations with the 2-D process simulator PROMIS", In Proc. NUPAD III, pp. 13-14, 1990.

  41. G. Hobler, "Multiple use of trajectories in Monte Carlo ion implantation simulations", In NASECODE VI (J. J. H. Miller, editor), pp. 501-506. Boole Press, Dublin, 1989.

  42. G. Hobler and S. Selberherr, "Efficient two-dimensional Monte Carlo simulation of ion implantation", In NASECODE V (J. J. H. Miller, editor), pp. 225-230. Boole Press, Dublin, 1987.

  43. G. Hobler and S. Selberherr, "Verification of ion implantation models by Monte Carlo simulations", In ESSDERC 87, pp. 445-448, 1987.

  44. G. Hobler, E. Langer, and S. Selberherr, "Two-dimensional modeling of ion implantation", In Simulation of Semiconductor Devices and Processes (K. Board and D. R. J. Owen, editors), vol. 2, pp. 256-270. Pineridge Press, Swansea, 1986.

  45. W. Jüngling, G. Hobler, S. Selberherr, and H.W. Pötzl, "Adaptive grids in space and time for process and device simulators", In Numerical Grid Generation in Computational Fluid Dynamics (J. Häuser and C. Taylor, editors), pp. 729-739. Pineridge Press, Swansea, 1986.