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Contact

Gottfried Strasser

Univ. Prof. Dr. 

+43.58801.362.30

gottfried.strasser@tuwien.ac.at

Group web page

MBE crystal growth

MBE (molecular beam epitaxy) techniques allow the epitaxialgrowth of different compounds. One of the model materials for optoelectronics are epitaxial layers of III-V semiconductors, mainly GaAs and related compounds. The controlled growth of single crystalline layers on an atomic scale makes it possible to design new materials with optimized electrical and optical characteristics.

The modular GEN II solid source MBE machine in ourcleanroom is a system specially designed for high quality growth of III-V materials. 8 different sources can be used to grow AlAsInAsGaAs and any terniary compound (AlGaAs,InGaAsInAlAs) with different doping concentrations. In situ RHEED measurements are used to monitor surface conditions and growth rate.