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Contact:

Univ. Prof. Dr.

Walter M. Weber

+43 58801 362 40

walter.weber@tuwien.ac.at

 

 

Latest news:

2021 -1 1 - 01:

Research highlight:

Intelligent Transistor Developed at TU Wien

 

2021 - 11 - 17:

Our new WiTec microscope has been updated with a polarizer for the exciting laser light and the capability to use our SuperK Extreme tunable laser source.

 

2021 - 11 - 12:

New paper accepted:

Bias-Switchable Photoconductance in a Nanoscale Ge Photodetector Operated in the Negative Differential Resistance Regime

 

2021 - 11 - 03:

We are happy to welcome our new master students Melisa Mustajbasic, BSc and Kihye Kim, BSc.

 

2021 - 10 - 22:

New paper accepted:

Nanometer-Scale Ge Based Adaptable Transistors Providing Programmable Negative Differential Resistance Enabling Multi Valued Logic

 

2021 - 10 - 11:

Research highlight:

New Nanostructure could be the key to quantum electronics

 

2021 - 10 - 01:

We are happy to welcome our new phd student Raphael Böckle. He will work on the integration and electrical characterization of SiGe and GeSn nanowire based devices.

 

2021 - 09 - 27:

Our DACH - Project Synthesis and Transport Phenomena of Nanocale, Metastable Solid Solutions and the Formation of Functional Heterostructures was accepted for funding.

 

2021 - 09 - 24:

New paper accepted:

A Top-Down Platform Enabling Ge Based Reconfigurable Transistors

 

2021 - 09 - 17:

Raphael, Böckle, MSc gives a talk on a "Top-down Fabricated Ge-based Reconfigurable FET" at the EUROMAT 2021, Graz, Austria.

 

2021 - 09 - 16:

Dr. Masiar Sistani gives a talk on "Gate-Tunable Negative Differential Resistance in Next-Generation Ge Nanodevices and their Performance Metrics" at the EUROMAT 2021, Graz, Austria.

 

2021 - 09 - 09:

New paper accepted:

Al–Ge–Al Nanowire Heterostructure: From Single‐Hole Quantum Dot to Josephson Effect

 

2021 - 08 - 23:

Dr. Masiar Sistani was invited to give a talk on "A Ge Quantum Dot Monolithically Embedded in a Metal-Semicoductor Heterostructure." at the JMC17, Grenoble, France.

Emerging Nanoelectronic Devices Group:

 

Scientific Background:

Over the last decades, following Moore's law, the continuous downscaling of the Si based, planar integrated circuit technology has been the main driving force to increase switching speed and reduce power consumption as well as cost of ultra-scaled integrated circuits. However, challenges arising from implications of short-channel effects forced a shift of research efforts towards the integration of new materials, processes and device architectures. In this context, emerging distributed computing paradigms such as the Internet of Things (IoT) are placing extraordinarily stringent constraints on computing hardware performance that require both a beyond CMOS and "More than Moore" approach enabling efficient and low-power technologies for data-intensive tasks such as Artificial Intelligence (AI) algorithms. Consequently, there is a significantly growing need for functional diversification as well as alternative computing and memory devices.

 

Mission Statement:

In the quest to push the contemporary scientific boundaries in nanoelectronics, the Weber group is focusing on a "More than Moore" approach extending device performances beyond the limits imposed by transistor miniaturization, enabling next generation energy efficient reconfigurable integrated circuits, targeting low supply voltages and a reduction of transistor count. Moreover, novel devices that fuse computing with non-volatile memory functionality are being conceived and advanced towards circuit enablement.

 

Group Members:

Prof. Walter M. Weber

Dr. Masiar Sistani

Dr. Daniele Nazzari

Lukas Wind, MSc

Raphael Böckle, MSc

Oliver Solfronk, BSc

Melisa Mustajbasic, BSc

Kihye Kim, BSc

Martina Bažíková

Kilian Eysin

Boris Lipovec

 

News:

Group Weber news section

 

Research Achievements:

Reconfigurable Electronics

 

Bottom-Up Nanowire Technologies for Printed Electronics and Biosensing

 

Ultrathin Body and Multigate Transistors for More Moore Electronics

 

Materials Screening and Charge Transport in High-k Dielectrics

 

Researchgate:

Link to the Emerging Nanoelectronic Devices Group Researchgate page

 

Group Publications:

Link to TU Wien publication database

 

Open Positions:

We are always looking for highly motivated bachelor, master and PhD students. The cross-disciplinary nature of the projects invites students with background in microelectronics, physics and material science. If you are interested in emerging nanoelectronic devices and their application on the nanoscale, please have a look at our bachelor and master classes and open positions in our group:

 

Link to bachelor and master classes

 

Links to open positions:

MSc. position: Electrical Transport in Steep-Slope Schottky Ge-FinFETs

MSc. position: Electrical and Optical Characterization of Ultra-Thin Ge Nanomembranes

MSc. position: Investigation of Amorphous Ge Nanosheets for Bolometric Applications

MSc. position: Device Integration and Electrical Characterization of Hyperdoped Ge-based Nanowires

MSc. position: Investigation of the Transport Properties of Ultra-Thin Monocrystalline Al Nanosheets

MSc. position: Passivation of Ge Surfaces for Next-Generation Nanodevices

 

To apply for a PhD or Postdoc position, please email a CV, a publication list and contact information of referees, as well as a short motivation letter to Prof. Walter M. Weber.